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vishay siliconix dg9451, dg9453 document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 1 8-channel, dual 4-channel, triple 2-channel multiplexers features ? halogen-free according to iec 61249-2-21 definition ? + 2.7 v to + 12 v single supply operation 2.5 v to 5 v dual supply operation ? fully specified at + 12 v, + 5 v, 5 v ? low charge injection (< 0.5 pc typ.) ? high bandwidth: 270 mhz ? low switch capacitance (c s(off) 1 pf typ.) ? good isolation and crosstalk performance (typ. - 44 db at 100 mhz) ? miniqfn16 package (1.8 mm x 2.6 mm) ? compliant to rohs directive 2002/95/ec applications ? data acquisition ? medical and healthcare devices ? control and automation equipments ? test instruments ? touch panels ? consumer description the dg9451, and dg9453 are high precision single and dual supply cmos analog multiplexers. dg9451 is an 8-channel multiplexer, and the dg9453 is a triple 2-channel multiplexer or triple spdt. designed to operate from a + 2.7 v to + 12 v single supply or from a 2.5 v to 5 v dual supplies, the dg9451, and dg9453 are fully specified at + 12 v, + 5 v and 5 v. all control logic inputs have guaranteed 1.4 v high limit when operating from + 5 v or 5 v supplies and 1.65 v when operating from a + 12 v supply. the dg9451, and dg9453 are prec ision multiplexers of low leakage, low charge injection, and low parasitic capacitance. they conduct equally well in both directions, offer rail to rail analog signal handling and can be used both as multiplexers as well as de-multiplexers. the dg9451, and dg9453 op erating temperature is specified from - 40 c to + 85 c and are available in 16 pin tssop and the ultra compact 1.8 mm x 2.6 mm miniqfn16 packages. functional block diagram and pin configuration pin 1 de v ice marking: yxx for dg9451 (miniqf n 16) 4xx for dg9453 xx = date/lot tracea b ility code yxx x x7 x5 x0 a x3 1 2 3 4 7 8 9 10 11 12 5 8 7 6 13 14 x4 16 v ee x2 c x6 e n able b x1 g n d v cc top v ie w dg9451 mqf n -16 logic 15 z1 z z0 1 2 3 4 7 8 9 10 11 12 5 8 7 6 13 14 15 16 y y1 y0 g n d top v ie w dg9453 mqf n -16 v cc e n able v ee a b c x1 x x0
www.vishay.com 2 document number: 65020 s10-2275-rev. b, 04-oct-10 vishay siliconix dg9451, dg9453 notes: a. - 40 c to 85 c datasheet limits apply. notes: a. signals on sx, dx, or inx exceeding v+ or v- will be clamped by internal diodes. li mit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 6.6 mw/c above 70 c. d. manual soldering with iron is not re commended for leadless components. the miniqfn- 16 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper l ip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. truth table enable input select inputs on switches c b a dg9451 dg9453 h x x x all switches open all switches open l l l l x to x0 x to x0, y to y0, z to z0 l l l h x to x1 x to x1, y to y0, z to z0 l l h l x to x2 x to x0, y to y1, z to z0 l l h h x to x3 x to x1, y to y1, z to z0 l h l l x to x4 x to x0, y to y0, z to z1 l h l h x to x5 x to x1, y to y0, z to z1 l h h l x to x6 x to x0, y to y1, z to z1 l h h h x to x7 x to x1, y to y1, z to z1 ordering information temp. range package part number dg9451, dg9453 - 40 c to 125 c a 16-pin miniqfn DG9451EN-T1-E4 dg9453en-t1-e4 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit v+ to v- 14 v gnd to v- 7 digital inputs a , v s , v d (v-) - 0.3 to (v+) + 0.3 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature - 65 to 150 c power dissipation b 16-pin miniqfn c, d 525 mw thermal resistance b 16-pin miniqfn d 152 c/w latch-up (per jesd78) > 300 ma
document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 3 vishay siliconix dg9451, dg9453 specifications for dual supplies parameter symbol test conditions unless otherwise specified v cc = + 5 v, v ee = - 5 v v in(a, b, c and enable) = 1.4 v, 0.3 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 5 5 - 5 5 v on-resistance r on i s = 1 ma, v d = - 3 v, 0 v, + 3 v room full 66 100 125 100 118 ? on-resistance match ? r on i s = 1 ma, v d = 3 v room full 36 10 6 8 on-resistance flatness r flatness i s = 1 ma, v d = - 3 v, 0 v, + 3 v room full 10.2 16 20 16 18 switch off leakage current i s(off) v+ = 5.5 v, v- = - 5.5 v, v d = 4.5 v, v s = 4.5 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 na i d(off) room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 channel on leakage current i d(on) v+ = 5.5 v, v- = - 5.5 v, v s = v d = 4.5 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 digital control v in(a, b, c and enable) low v il full 0.3 0.3 v v in(a, b, c and enable) high v ih full 1.4 1.4 input current, v in low i il v in(a, b, c and enable) under test = 0.3 v full 0.01 - 1 1 - 1 1 a input current, v in high i ih v in(a, b, c and enable) under test = 1.4 v full 0.01 - 1 1 - 1 1 input capacitance e c in f = 1 mhz room 3.4 pf dynamic characteristics transition time t trans r l = 300 ? , c l = 35 pf see figure 1, 2, 3 room full 66 180 218 180 207 ns enable turn-on time t on room full 152 250 295 250 282 enable turn-off time t off room full 60 125 136 125 131 break-before-make time delay t d room full 32 13 13 off isolation e oirr r l = 50 ? , c l = 15 pf f = 100 khz room < - 90 db f = 10 mhz room - 65 f = 100 mhz room - 44 channel-to-channel crosstalk e x ta l k f = 100 khz room < - 90 f = 10 mhz room - 74 f = 100 mhz room - 44 bandwith, 3 db bw r l = 50 ? dg9451 room 270 mhz dg9453 room 525 charge injection e qv g = 0 v, r g = 0 ? , c l = 1 nf room 0.20 pc source off capacitance e c s(off) f = 1 mhz dg9451 room 1 pf dg9453 room 1 drain off capacitance e c d(off) f = 1 mhz dg9451 room 10 dg9453 room 3 channel on capacitance e c d(on) f = 1 mhz dg9451 room 16 dg9453 room 8 total harmonic distortion e thd signal = 1 v rms , 20 hz to 20 khz, r l = 600 ? room 0.01 %
www.vishay.com 4 document number: 65020 s10-2275-rev. b, 04-oct-10 vishay siliconix dg9451, dg9453 power supplies power supply current i+ v cc = + 5 v, v ee = - 5 v v in(a, b, c and enable) = 0 or 5 v room full 0.05 1 10 1 10 a negative supply current i- room full - 0.05 - 1 - 10 - 1 - 10 ground current i gnd room full - 0.05 - 1 - 10 - 1 - 10 specifications for dual supplies parameter symbol test conditions unless otherwise specified v cc = + 5 v, v ee = - 5 v v in(a, b, c and enable) = 1.4 v, 0.3 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d specifications for unipolar supplies parameter symbol test conditions unless otherwise specified v cc = + 5 v, v ee = 0 v v in(a, b, c and enable) = 1.4 v, 0.3 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0 5 0 5 v on-resistance r on i s = 1 ma, v d = 0 v, + 3.5 v room full 105 165 205 165 194 ? on-resistance match ? r on i s = 1 ma, v d = + 3.5 v room full 3.2 8 13 8 10 on-resistance flatness r flatness i s = 1 ma, v d = 0 v, + 3 v room full 17 26 30 26 28 switch off leakage current i s(off) v+ = + 5.5 v, v- = 0 v v d = 1 v/4.5 v, v s = 4.5 v/1 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 na i d(off) room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 channel on leakage current i d(on) v+ = + 5.5 v, v- = 0 v v d = v s = 1 v/4.5 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 digital control v in(a, b, c and enable) low v il full 0.3 0.3 v v in(a, b, c and enable) high v ih full 1.4 1.4 input current, v in low i l v in(a, b, c and enable) under test = 0.3 v full 0.01 - 1 1 - 1 1 a input current, v in high i h v in(a, b, c and enable) under test = 1.4 v full 0.01 - 1 1 - 1 1 dynamic characteristics transition time t trans r l = 300 ? , c l = 35 pf see figure 1, 2, 3 room full 79 205 295 205 285 ns enable turn-on time t on room full 220 335 403 335 393 enable turn-off time t off room full 93 150 173 150 163 break-before-make time delay t d room full 36 20 20 charge injection e q v g = 0 v, r g = 0 ? , c l = 1 nf full 0.81 pc off isolation e oirr r l = 50 ? , c l = 15 pf f = 100 khz room < - 90 db channel-to-channel crosstalk e x ta l k room < - 90
document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 5 vishay siliconix dg9451, dg9453 parameter symbol test conditions unless otherwise specified v cc = + 5 v, v ee = 0 v v in(a, b, c and enable) = 1.4 v, 0.3 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d dynamic characteristics source off capacitance e c s(off) f = 1 mhz dg9451 room 1 pf dg9453 room 1 drain off capacitance e c d(off) f = 1 mhz dg9451 room 11 dg9453 room 3 channel on capacitance e c d(on) f = 1 mhz dg9451 room 17 dg9453 room 9 power supplies power supply current i+ v in(a, b, c and enable) = 0 v or 5 v room full 0.05 1 10 1 10 a negative supply current i- room full - 0.05 - 1 - 10 - 1 - 10 ground current i gnd room full - 0.05 - 1 - 10 - 1 - 10 specifications for unipolar supplies specifications for unipolar supplies parameter symbol test conditions unless otherwise specified v cc = + 12 v, v ee = 0 v v in(a, b, c and enable) = 1.6 v, 0.5 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0 12 0 12 v on-resistance r on i s = 1 ma, v d = 0.7 v, 6.0 v, 11.3 v room full 68 105 143 105 137 ? on-resistance match ? r on i s = 1 ma, v d = + 0.7 v room full 47 10 7 8 on-resistance flatness r flatness i s = 1 ma, v d = 0.7 v, + 11.3 v room full 32 45 49 45 47 switch off leakage current i s(off) v+ = + 12 v, v- = 0 v v d = 1 v/11 v, v s = 11 v/1 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 na i d(off) room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 channel on leakage current i d(on) v+ = + 12 v, v- = 0 v v d = v s = 1 v/11 v room full 0.02 - 1 - 50 1 50 - 1 - 5 1 5 digital control v in(a, b, c and enable) low v il full 0.5 0.5 v v in(a, b, c and enable) high v ih full 1.6 1.6 input current, v in low i l v in(a, b, c and enable) under test = 0.5 v full 0.01 - 1 1 - 1 1 a input current, v in high i h v in(a, b, c and enable) under test = 1.6 v full 0.01 - 1 1 - 1 1 dynamic characteristics transition time t trans r l = 300 ? , c l = 35 pf see figure 1, 2, 3 room full 55 135 166 135 155 ns enable turn-on time t on room full 106 185 219 185 205 enable turn-off time t off room full 65 130 144 130 137 break-before-make time delay t d room full 30 12 12 charge injection e q v g = 0 v, r g = 0 ? , c l = 1 nf room 0.79 pc
www.vishay.com 6 document number: 65020 s10-2275-rev. b, 04-oct-10 vishay siliconix dg9451, dg9453 notes: a. v in = input voltage to perform proper function. b. room - 25 c, full = as determi ned by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c, unless otherwise noted) dynamic characteristics off isolation e oirr r l = 50 ? , c l = 15 pf f = 100 khz room < - 90 db channel-to-channel crosstalk e x ta l k room < - 90 source off capacitance e c s(off) f = 1 mhz dg9451 room 1 pf dg9453 room 1 drain off capacitance e c d(off) f = 1 mhz dg9451 room 9 dg9453 room 3 channel on capacitance e c d(on) f = 1 mhz dg9451 room 15 dg9453 room 8 power supplies power supply current i+ v in(a, b, c and enable) = 0 v or 12 v room full 0.05 1 10 1 10 a negative supply current i- room full - 0.05 - 1 - 10 - 1 - 10 ground current i gnd room full - 0.05 - 1 - 10 - 1 - 10 specifications for unipolar supplies parameter symbol test conditions unless otherwise specified v cc = + 12 v, v ee = 0 v v in(a, b, c and enable) = 1.6 v, 0.5 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d on-resistance vs. v d and signal supply voltage 0 024 8 14 61012 200 50 400 300 100 500 150 350 250 450 v d - analog voltage (v) r on - on-resistance ( ) v cc = 2.7 v v cc = 3.0 v v cc = 5.0 v v cc = 10.8 v v cc = 12.0 v v cc = 13.2 v t = 25 c i s = 1 ma on-resistance vs. analog voltage and temperature 0 - 7 - 5 - 3 1 7 - 1 3 5 200 50 100 300 150 250 v d - analog voltage (v) r on - on-resistance ( ) v cc = + 2.7 v v ee = - 2.7 v t = 25 c i s = 1 ma v cc = + 5.0 v v ee = - 5.0 v v cc = + 6.2 v v ee = - 6.2 v
document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 7 vishay siliconix dg9451, dg9453 typical characteristics (25 c, unless otherwise noted) on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature supply current vs. input switching frequency 0 0 0.5 1.0 2.0 3.0 1.5 2.5 300 50 100 500 200 400 350 150 250 450 v d - analog voltage (v) r on - on-resistance ( ) + 125 c + 85 c + 25 c - 40 c v cc = 3.0 v, v ee = 0 v i s = 1 ma 0 02 13579 4811 10 12 6 50 75 25 100 250 200 150 175 225 125 250 v d - analog voltage (v) r on - on-resistance ( ) + 125 c + 85 c + 25 c - 40 c v cc = 12.0 v, v ee = 0 v i s = 1 ma 100 pa 10 100 1k 100k 10k 1m 10m 1 na 10 na 1 a 100 a 10 ma 100 na 10 a 1 ma input switching frequency (hz) i+ - supply current (a) v cc = + 5.0 v v ee = - 5.0 v i cc i gnd i ee on-resistance vs. analog voltage and temperature on-resistance vs. analog voltage and temperature leakage current vs. temperature 0 01.0 0.5 1.5 2.5 3.5 4.5 2.0 4.0 5.0 3.0 300 50 100 400 200 350 150 250 v d - analog voltage (v) r on - on-resistance ( ) + 125 c + 85 c + 25 c - 40 c v cc = 5.0 v, v ee = 0 v i s = 1 ma 0 - 5 - 3 - 4 - 2 0 2 4 - 1 3 5 1 50 75 25 100 250 200 150 175 225 125 v d - analog voltage (v) r on - on-resistance ( ) + 125 c + 85 c + 25 c - 40 c v cc = 5.0 v, v ee = - 5 v i s = 1 ma 0.1 - 60 - 20 20 100 60 140 1 10 1000 100 000 100 10 000 temperature (c) leakage current (pa) i d(on) i s(off) i d(off) v cc = + 13.2 v v ee = 0 v
www.vishay.com 8 document number: 65020 s10-2275-rev. b, 04-oct-10 vishay siliconix dg9451, dg9453 typical characteristics (25 c, unless otherwise noted) leakage current vs. temperature dg9451 insertion loss, off-isolation, crosstalk vs. frequency frequency response 0.1 - 60 - 20 20 100 60 140 1 10 1000 100 000 100 10 000 temperature (c) leakage current (pa) v cc = + 5.5 v v ee = - 5.5 v i d(on) i s(off) i d(off) - 100 100k 1m 10m 1g 100m - 20 - 80 - 60 10 - 40 0 - 30 - 90 - 70 - 50 - 10 frequency (hz) loss, oirr, x talk (db) v cc = + 5.0 v v ee = - 5.0 v r l = 50 loss oirr x talk dg9451 - 100 1 10 100 10 000 1000 - 20 - 80 - 60 10 - 40 0 - 30 - 90 - 70 - 50 - 10 frequency (hz) gain (db) loss oirr x talk dg9453 v cc = + 5.0 v v ee = - 5.0 v r l = 50 0 024 10 612 814 0.5 1.0 2.0 3.0 1.5 2.5 v+ - supply voltage (v) v t - switching threshold (v) - 40 c to + 125 c v ih v il - 2.00 - 5 - 3 - 1 3 11 1579 0 - 1.50 - 1.00 2.00 - 0.50 1.00 0.50 1.50 v s - analog voltage (v) q inj - charge injection (pc) v cc = + 12.0 v v ee = 0 v v cc = + 5.0 v v ee = - 5.0 v v cc = + 5.0 v v ee = 0 v 0 150 100 50 200 400 250 350 300 temperature (c) t on(en) , t off(en) - switching time (ns) v cc = + 12.0 v, v ee = 0 v, t off - 60 - 20 20 80 140 60 100 v cc = + 5.0 v, v ee = 0 v, t on v cc = + 5.0 v, v ee = - 5.0 v, t on v cc = + 12.0 v, v ee = 0 v, t on v cc = + 5.0 v, v ee = - 5 v, t off v cc = + 5.0 v, v ee = 0 v, t off
vishay siliconix dg9451, dg9453 document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 9 test circuits a b c e n able g n d v cc v ee v ee v cc v o 50 300 35 pf x x0 x7 x1 - x6 v x0 v x7 0 v 1. 8 v 50 % 50 % 90 % t tra n s o n x7 o n (dg9451) v o v a, b, c v x7 t tra n s 90 % dg9451 v x0 or v y0 or v z0 v x3 or v y3 v x1 or v y1 or v z1 or x1 or y1 or z1 o n (dg9453) v 0 or y 0 or z 0 figure 1. transition time a or b or c e n able g n d v cc v ee v ee v cc v o 50 300 35 pf x or y or z x0 or y0 or z0 x1 or y1 or z1 dg9453 v x0 or v y0 or v z0 v x1 or v y1 or v z1 a b c e n able g n d v cc v ee v ee v cc v o 50 300 35 pf x x0 x1 - x7 0 v 1. 8 v 50 % 50 % 90 % t off ena b le x or y or z disa b le x or y or z v o v enable v cc 0 v t o n 90 % dg9451 v x0 or v y0 or v z0 figure 2. enable switching time a or b or c e n able g n d v cc v ee v ee v cc v o 50 300 35 pf x or y or z x0 or y0 or z0 x1 or y1 or z1 dg9453 v cc
www.vishay.com 10 document number: 65020 s10-2275-rev. b, 04-oct-10 vishay siliconix dg9451, dg9453 test circuits a b c e n able g n d v cc v ee v ee v o 50 300 35 pf x x0 - x7 0 v 1. 8 v 50 % 8 0 % t d v o v a, b, c v cc v cc 0 v dg9451 v x0 or v y0 or v z0 figure 3. break-before-make a or b or c e n able g n d v cc v ee v ee v cc v o 50 300 35 pf x or y or z x0, x1 or y0, y1 or z0, z1 dg9453 v cc figure 4. charge injection a b c e n able g n d v cc v ee v ee v cc v o 1 nf x xx 0 v v cc v o v enable r g channel select v g o n off off v o t r < 5 ns t f < 5 ns
vishay siliconix dg9451, dg9453 document number: 65020 s10-2275-rev. b, 04-oct-10 www.vishay.com 11 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65020 . figure 5. insertion loss figure 7. crosstalk a b c e n able g n d v cc v ee v ee v cc v out x x0 v g r g = 50 50 v i n n et w ork analyzer insertion loss = 20 log v out v i n a b c e n able g n d v cc v ee v ee v cc v out x x0 v g r g = 50 50 v i n n et w ork analyzer crosstalk = 20 log v out v i n 50 xx figure 6. off isolation figure 8. source, drain capacitance a b c e n able g n d v cc v ee v ee v cc v out x x0 v g r g = 50 50 v i n n et w ork analyzer off isolation = 20 log v out v i n v cc a b c e n able g n d v cc v ee v ee v cc x x0 | to | xx impedance analyzer channel select
vishay siliconix package information document number: 74323 14-aug-06 www.vishay.com 1 mini qfn-16l dim millimeters inches min. nam max. min. nam max. a 0.70 0.75 0.80 0.0275 0.0295 0.0315 a1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 c 0.15 0.20 0.25 0.0059 0.0078 0.0098 d 2.60 bsc 0.1023 bsc e 1.80 bsc 0.0708 bsc e 0.40 bsc 0.0157 bsc l 0.35 0.40 0.45 0.0137 0.0157 0.0177 l1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ecn t-06380-rev. a, 14-aug-06 dwg: 5954 back side v ie w d e (2) (1) (16) (15) (14) (13) a c b e l a1 (4) (3) (5) (6) (7) ( 8 ) (9) (12) (11) (10) (10) (9) (12) (11) (3) (2) (1) (4) (16) (15) (14) (13) (5) (6) (7) ( 8 ) l1
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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